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CGHV35400F
400-W, 2900 – 3500-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Cree’s CGHV35400F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 – 3.5-GHz, S-band, radar-amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440210.

Features:

2.9 – 3.5-GHz operation
400-W typical output power
10.5-dB power gain
60% typical drain efficiency
50-Ohm internally matched
<0.3 dB pulsed amplitude droop